根据发光波长、化合物半导体的能带隙和晶格常数三者的关系和实验数据，研究设计了ＩｎＧａＡｌＰ双异质结各层的ｘ，ｙ值组成、掺杂浓度、厚度等整个ＬＥＤ的管芯结构。这种新颖的ＧａＰ（电流扩散层）／ＩｎＧａＡｌＰ（双异质结）／ＧａＰ（衬底）管芯结构，对５９０ｎｍ峰值波长全透明，比ＧａＰ或ＧａＡｌＡｓ（电流扩散层）／ＩｎＧａＡｌＰ（双异质结）／ＧａＡｓ（衬底）管芯结构的出光率高出两倍，其外量子效率不小于６％。 According to the relationship between the wavelength of light emission, the bandgap of the compound semiconductor and the lattice constant and the experimental data, the design of the x, y value composition, doping concentration and thickness of the entire LED tube of the InGaAlP double heterostructure layer Core structure. This novel GaP / InGaAlP / GaP die structure is fully transparent to 590 nm peak wavelength and is more transparent than GaP or GaAlAs (current diffused layer) / InGaAlP Junction) / GaAs (substrate) die structure is twice as efficient and its external quantum efficiency is not less than 6%.