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为了获得应用于AlGaAs激光器上的优异的氮化硅薄膜,采用等离子增强化学气相沉积(PECVD)低温条件下在GaAs衬底上制备了不同参数的氮化硅薄膜,利用光学膜厚仪、原子力显微镜(AFM)、傅里叶变换红外光谱(FTIR)等技术对薄膜残余应力、表面形貌、折射率等进行了分析。结果表明,薄膜的残余应力随沉积功率的增加而变大;随气压先降低后变大,在200 Pa时仅为6 MPa。薄膜的表面粗糙度随功率的提高而变大;随气压的提高而减小。功率和气压对薄膜的折射率影响不大,均在2.0~2.2之间。薄膜中氢的存在形式为N-H键。选择合适的功率和气压,可以在低温下获得极低应力和优异表面形貌的氮化硅薄膜。
In order to obtain excellent silicon nitride films for AlGaAs lasers, different parameters of silicon nitride films were prepared on GaAs substrates by plasma enhanced chemical vapor deposition (PECVD) at low temperature. (AFM) and Fourier transform infrared spectroscopy (FTIR) were used to analyze the film residual stress, surface morphology and refractive index. The results show that the residual stress of the film increases with the increase of deposition power, and then increases with the decrease of pressure first and then reaches 6 MPa at 200 Pa. The surface roughness of the film increases with the increase of the power and decreases with the increase of the pressure. Power and pressure on the refractive index of the film has little effect, are between 2.0 to 2.2. The hydrogen in the film is in the form of an N-H bond. Choose the right power and pressure, you can get very low stress at low temperatures and excellent surface morphology of silicon nitride film.