近日,IBM在京都举行的VLSI Technology and Circuits研讨会上宣布,IBM与其研究联盟合作伙伴Global Foundries以及三星公司为新型的芯片制造了5纳米(nm)大小的晶体管。为了实现这个壮举,就必须在现有的芯片内部构架上进行改变。研究团队将硅纳米层进行水平堆叠,而非传统的硅半导体行业的垂直堆叠构架,这使得5nm晶体管的工艺有了实现可能,而这一工艺将有可能引爆未来芯片性能的进一步高速发展。 Recently, IBM announced at the VLSI Technology and Circuits Symposium in Kyoto that IBM and its research partner, Global Foundries, and Samsung Corporation have manufactured 5-nm transistors for the new chips. In order to achieve this feat, we must change the existing internal chip architecture. Instead of the vertical stack architecture of the traditional silicon semiconductor industry, the team of researchers stacked the silicon nanostructures horizontally, making the 5nm transistor process possible, which could potentially detonate further rapid performance improvements in the future.