Zinc oxide (ZnO) single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. Themaximum size of the as-grown ZnO crystal is about φ25 mm× 5mm. The transmittance of the as-grown ZnOcrystal is more than 70% in the range of 600-800nm and the optical band gap is estimated to be 3.21 eV. Thephotoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of nativedefects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal haslow electrical resistivity of 0.02394Ωcm-1 and a high carrier concentration of 2.10 × 1018 cm-3