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以高质量GaN单晶基片作为衬底实现GaN的同质外延生长,是获得GaN半导体器件优异性能的基础。高质量GaN单晶基片的缺乏已成为国际范围制约GaN器件发展的瓶颈。在GaN体单晶的几种生长方法中,由于Na助熔剂法的生长条件相对温和且成本相对较低,近年来发展较快。本文从Na助熔剂法的原理、生长工艺、助熔剂种类以及得到晶体尺寸和质量等几方面进行了综述,分析了目前Na助熔剂法生长GaN单晶中的技术问题并提出了进一步研究的一些建议。
The high-quality GaN single crystal substrate as a substrate for the homoepitaxial growth of GaN is the basis for obtaining excellent performance of GaN semiconductor devices. The lack of high-quality GaN single crystal substrate has become the bottleneck in the international development of GaN devices. In several growth methods of GaN single crystal, Na flux method grows rapidly in recent years due to its relatively mild growth conditions and relatively low cost. In this paper, the principles of Na flux method, growth process, flux types and crystal size and quality are reviewed. The current technical problems in the growth of GaN single crystals by Na flux method are analyzed and some further studies are proposed Suggest.