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利用磁场增强的石墨阴极弧在Si片和M2高速钢上沉积了ta-C薄膜,重点研究了基体偏压对膜层截面形貌、沉积速率、膜层结构、耐腐蚀性能和摩擦系数的影响。结果发现,在-100V偏压下膜层较为致密,缺陷较少;基体偏压增加,膜层沉积速率增加;拉曼光谱分析显示,在-100V偏压下ID/IG值最小(<0.4),表明sp3键含量最高;平衡腐蚀电位随基体偏压先升高后降低,在-100V时最大;膜层耐蚀性提高3倍;摩擦副采用Al2O3,在-100V偏压下摩擦系数最低。
The effect of substrate bias on the cross-section morphology, deposition rate, film structure, corrosion resistance and friction coefficient of the films was mainly studied by using graphite cathodic arc enhanced with magnetic field to deposit ta-C thin films on Si and M2 high speed steel . The results show that the film is more compact with fewer defects at -100V bias, the substrate bias increases and the film deposition rate increases. Raman spectroscopy shows that the ID / IG value is the smallest at -100V bias (<0.4) , Indicating that the content of sp3 bond is the highest. The equilibrium corrosion potential firstly increases and then decreases with the substrate bias, and reaches the maximum at -100V. The corrosion resistance of the coating increases by 3 times. The friction pair uses Al2O3 with the lowest friction coefficient at -100V bias.