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以H2和CH4的混合气体为气源,使用实验室自制10 kW新型装置,采用微波等离子体化学气相沉积法(MPCVD)在Si(100)基体上沉积金刚石薄膜,然后采用扫描电镜(SEM)、Raman光谱以及XRD光谱,以得到表面形貌、样品质量和晶面取向等信息,由此获得微波功率对金刚石薄膜取向的影响。结果表明,微波功率对金刚石膜的质量、表面形貌和晶面取向都有明显地影响,随着微波功率升高,金刚石薄膜的形貌变得规则,薄膜中Isp3/Isp2由1.52提高到6.58,其沉积晶面的I(100)/I(111)由0.38提高到3.93。当微波功率为4 900 W时,所得沉积样品晶面以(100)为主,形貌规则,纯度很高。
A novel 10 kW reactor was used to produce a diamond-like carbon film on a Si (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a mixed gas of H2 and CH4 as the gas source. The scanning electron microscopy (SEM) Raman spectroscopy and XRD spectroscopy to obtain the surface morphology, sample quality and crystal orientation and other information, thus obtaining the microwave power on the diamond film orientation. The results show that the microwave power has a significant effect on the quality, surface morphology and crystal orientation of diamond films. The morphology of diamond films becomes regular with the increase of microwave power. The Isp3 / Isp2 in the films increases from 1.52 to 6.58 , The I (100) / I (111) of the deposited crystal plane increases from 0.38 to 3.93. When the microwave power is 4 900 W, the crystal surface of the resulting deposited sample is dominated by (100), with a regular morphology and high purity.