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The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO_2/TiO_2 distributed Bragg reflector(DBR) and an Al mirror as a hybrid reflective current blocking layer(CBL).Such a hybrid reflective CBL not only plays the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p-electrode pad from being absorbed by a metal electrode.At a wavelength of 455 nm,a 1.5-pair of SiO_2/TiO_2 DBR and an Al mirror(i.e.1.5-pair DBR+Al) deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8%.With 20 mA current injection,it was found that the output power was 25.26,24.45,23.58 and 22.45 mW for the LED with a 1.5-pair DBR+Al CBL,a 3-pair DBR CBL,SiO_2 CBL and without a CBL,respectively.
The light output power of an InGaN / GaN light-emitting diode is improved by using a SiO 2 / TiO 2 distributed Bragg reflector (DBR) and an Al mirror as a hybrid reflective current blocking layer (CBL) the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p-electrode pad from being absorbed by a metal electrode. At a wavelength of 455 nm, a 1.5-pair of SiO 2 / TiO 2 DBR and an Al mirror (ie1.5-pair DBR + Al) deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8% .With 20 mA current injection, it was found that the output power was 25.26, 24.45, 23.58 and 22.45 mW for the LED with a 1.5-pair DBR + Al CBL, a 3-pair DBR CBL, SiO 2 CBL and without a CBL, respectively.