探测器采用浸没透镜结构的单元光伏芯片,工作波段为2.5~3.2μm。采用储能焊TO9管壳封装,将二级热电致冷器、热敏电阻、透镜结构的HgCdTe红外探测器封装为一红外探测器组件,组件可在室温至-50℃下工作,经过老炼、力学和热学环境适应性试验后,结果表明,HgCdTe红外探测器的零偏电阻(R_0)变化率、探测器峰值电流响应率(R_(λ_p,I))变化率和热电致冷器(TEC)的交流阻抗(R)的变化率均小于5%,探测器暗电流I_d@-0.1V≤9×10~(-7)A,探测器的漏率优于1×10~(-7)Torr·l/s,组件的密封性达到了航天要求。 The detector uses a unit photovoltaic chip with an immersion lens structure and has a working wavelength of 2.5-3.2 μm. The energy storage TO9 package shell package, the second thermoelectric cooler, thermistor, lens structure of the HgCdTe infrared detector is packaged as an infrared detector module, the module can work at room temperature to -50 ℃, after the old , Mechanical and thermal environment adaptability test results show that the rate of change of zero offset resistance (R_0), peak current response rate (R_ (λ_p, I)) of HgCdTe infrared detector and that of thermoelectric cooler ) Of the AC impedance (R) rate of change of less than 5%, the detector dark current I_d@-0.1V ≤ 9 × 10 ~ (-7) A, the detector leak rate better than 1 × 10 -7 Torr · l / s, the sealing of the components to space requirements.