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设计并制作出一种新型集成压力传感器——集成 MOS力敏运放压力传感器 .它将运算放大器中的一对PMOS差分输入管集中设置在 N型 (10 0 ) Si膜片上的最大应力区 ,并使它们的沟道方向相互垂直 ,运放中其它元件全部集中设置在厚体硅上的低应力区 .在压力作用下 ,输入级 MOS管沟道中载流子迁移率发生变化 ,运算放大器以其为输入信号而产生力敏输出 .这种压力传感器具有很高的压力响应灵敏度 ,可望在诸多领域有广泛应用 .
A new type of integrated pressure sensor, an integrated MOS load cell, is designed and fabricated.It integrates a pair of PMOS differential input transistors in the op-amp to the maximum stress area on the N-type (100) Si film , And make their channel direction perpendicular to each other, the op-amp all the other components are concentrated in the low-stress region of the thick silicon set in. Under the action of pressure, the carrier mobility of the input MOS transistor channel changes, op amp With its input signal and force-sensitive output.This pressure sensor has a high pressure response sensitivity, is expected to be widely used in many fields.