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Dense,uniform ZnO nanowire(NW) networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane(APTES) to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO_2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors (FETs) are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm~(-2),it exhibits a current on/off ratio of 2.4×10~5,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm~2/(V·s).
Dense, uniform ZnO nanowire (NW) networks are prepared by using a simple and sufficient selfassembly method. In this method, ZnO NWs are modified with aminopropyltriethoxysilane (APTES) to form positively charged amine-terminated surfaces. The modified ZnO NWs are adsorbed on negatively charged SiO 2 / Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution. Field-effect transistors (FETs) are fabricated and studied based on the ZnO NW networks. For a typical device with an NW density of 2.8 μm ~ -2), it exhibits a current on / off ratio of 2.4 × 10 -5, a transconductance of 336 nS, and a field-effect mobility of 27.4 cm -2 / (V · s).