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应用灵敏的表面分析技术XPS(x射线光电子能谱)对不同偏置条件下γ射线辐照的Si-SiO_2界面进行断层分析表明,SiO_2态下硅的2p结合能信号强度随辐照剂量的增加而减少,谱峰半宽则增加;且在正偏电场下辐照样品的信号强度明显低于未辐照样品及在负偏电场下辐照的样品,而谱峰半宽情形则相反。文中以应力键梯度模型为基础对实验结果作了解释。
Using the sensitive surface analysis technique XPS (x-ray photoelectron spectroscopy), the tomographic analysis of γ-ray irradiated Si-SiO_2 interface under different bias conditions shows that the signal intensity of 2p binding energy of silicon increases with the increase of irradiation dose While the half-width of the spectrum increases. The signal intensity of the irradiated sample under the positive bias field is obviously lower than that of the un-irradiated sample and the sample irradiated under the negative bias field, while the half-width of the spectrum peak is opposite. The experimental results are explained based on the stress-gradient model.