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目的培养人体具有抗砷特性的细胞株,为人体抗砷基因研究奠定基础。方法采用人体脐静脉内皮细胞(ECV鄄304),在含有低剂量亚砷酸钠(NaAsO2)的培养基中长期培养,并设同步对照细胞组;利用噻唑兰(MTT)检测法计算细胞生存率及半数致死量(LD50)作为反映细胞对砷耐受性改变的指标。结果短期诱导,细胞未表现出砷耐受性提高,经过12周NaAsO2诱导后,48h急性砷毒性实验中,实验组细胞对急性染砷表现出明显的耐受性提高,实验组在各浓度下生存率都明显高于同步对照组。实验组LD50为14.3μmol/L,对照组LD50为3.9μmol/L。结论人体细胞与其他生物体一样,在长期低剂量砷诱导下可以具备抗砷的特性。
Objective To cultivate human cell lines with anti-arsenic properties and lay the foundation for human anti-arsenic gene research. Methods Human umbilical vein endothelial cells (ECV-304) were cultured in culture medium containing low-dose sodium arsenite (NaAsO2) for a long time. Synchronous control cells were also established. Cell viability was calculated by MTT assay And half the lethal dose (LD50) as indicators reflect the change of arsenic tolerance cells. The results showed that the cells did not show any increase of arsenic tolerance. After 12 weeks of induction with NaAsO2, 48h acute arsenic toxicity test showed that the experimental group showed obvious tolerance to acute arsenic exposure. In the experimental group, Survival rates were significantly higher than the control group. The experimental group LD50 14.3μmol / L, the control group LD50 3.9μmol / L. Conclusions Human cells, like other organisms, are resistant to arsenic under long-term low-dose arsenic induction.