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采用分布式放大器设计原理,基于GaAs PHEMT低噪声工艺技术,研制了一款超宽带低噪声放大器单片电路。该款放大器选用分布式拓扑结构,由五级电路构成,为了进一步提高分布式放大器的增益,在每一级又采用了两个场效应晶体管(FET)串联结构。放大器采用了自偏压单电源供电,因为每级有两个FET串联,自偏压电路更为复杂,通过多个电阻分压的方式确定了每个FET的工作点。测试结果表明,该放大器在频率4～20 GHz内,增益大于14 dB,噪声系数小于3.0 dB,增益平坦度小于±1.0 dB,输入驻波比小于1.5∶1,输出驻波比小于1.8∶1,1 dB压缩点输出功率大于10 dBm。放大器的工作电压为8 V,电流约为50 mA,芯片面积为2.0 mm×2.0 mm。
Adopting the principle of distributed amplifier design, a monolithic circuit of ultra-wideband low noise amplifier was developed based on GaAs PHEMT low noise process technology. The amplifier uses a distributed topology, composed of five circuits, in order to further improve the gain of the distributed amplifier, and at each level has adopted two field effect transistor (FET) series structure. The amplifier uses a self-biased single-supply operation because each FET has two FETs in series and the self-bias circuit is more complex. The operating point of each FET is determined by dividing the resistors by multiple resistors. The test results show that the amplifier has a gain of more than 14 dB, a noise figure of less than 3.0 dB, a gain flatness of less than ± 1.0 dB, an input standing wave ratio of less than 1.5: 1 and an output standing wave ratio of less than 1.8: 1 in the frequency range of 4-20 GHz , 1 dB compression point output power is greater than 10 dBm. The operating voltage of the amplifier is 8 V, the electric current is about 50 mA, the chip area is 2.0 mm × 2.0 mm.