CeO2掺杂对SBT-NBT铋层状无铅压电陶瓷性能的影响

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本文通过文献调研确定配方(1-x)SrBi4Ti4O15-xNa0.5Bi4.5Ti4O15具有较好的压电性能,再通过CeO2的掺杂进行性能调整.与纯0.9SBT-0.1NBT相比,掺杂CeO2后压电性能有明显的改善,当CeO2的掺杂量为0.50wt%时,获得最佳配方性能为:d33=27 pC/N,TC=598oC,tanδ=0.09%,同时具有较好的耐高温性能,大大提升了其在高温领域的应用价值.
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