宽禁带半导体材料GaN作为第三代半导体材料具有传统半导体材料所不具备的优异性能,在高频、高压、高温和大功率器件领域具有重要的应用。介绍了硅基GaN(GaN-on-Si)器件提高性能的技术路线,以及与之相关的材料集成技术。 Wide Band-Gap Semiconductor Material As the third-generation semiconductor material, GaN has the outstanding performance not found in traditional semiconductor materials and has important applications in high-frequency, high-voltage, high-temperature and high-power devices. The technical route to improve the performance of GaN-on-Si devices and the related materials integration technology are introduced.