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以三氯化铝和叠氮化钠为原料,用复分解反应制备单晶氮化铝(AlN)纳米线。样品呈灰白色粉末,反应温度为650℃,反应时间为3h,并对该样品进行X射线衍射、透射电镜和选区电子衍射测试分析。结果表明:样品为六方相氮化铝且为表面光滑的长直形圆柱状,直径为50 nm左右,长度均在10μm以上,晶格常数分别为a=0.268nm、c=0.498nm。AlN样品性能的研究表明:样品禁带宽度约为6.14eV,并对光致发光谱中各峰的形成原因进行分析。采用气-固生长机理和择优取向原理对单晶纳米线的生长进行解释。
Using aluminum trichloride and sodium azide as raw materials, single crystal aluminum nitride (AlN) nanowires were prepared by metathesis reaction. The sample was gray-white powder, the reaction temperature was 650 ℃, the reaction time was 3h, and the sample was X-ray diffraction, transmission electron microscopy and selected area electron diffraction test analysis. The results show that the sample is hexagonal aluminum nitride and has a long smooth surface with a diameter of about 50 nm and a length of 10 μm. The lattice constants are a = 0.268 nm and c = 0.498 nm, respectively. Studies on the properties of AlN samples show that the band gap of the sample is about 6.14 eV, and the formation of each peak in the photoluminescence spectrum is analyzed. The growth of single crystal nanowires is explained by gas-solid growth mechanism and preferred orientation principle.