摩尔定律是推动集成电路性能前进的影响力参数。在过去数十年里集成电路数量每两年就翻一倍。现在这个步伐已经被超越?至少14 nm制程和FinFET技术的开发商是这么看的。英特尔、IBM、东芝、三星都在采纳14 nm制程,并将在研发工作完成后尽快投入FinFET量产。FinFET技术由加州大学伯克利分校的研究人员所发明,能够带来一些显著的性能提升,包括能够严格控制亚微米级下的短沟道效应、降低短态电流。而且该技术能够以单个晶体管作为多门设备。使用实验性的闸极堆叠材料 Moore’s law is to promote the performance of the integrated circuit parameters of influence. The number of integrated circuits has doubled every two years in the past decades. Now this step has been exceeded? At least 14 nm process and FinFET technology developers see it this way. Intel, IBM, Toshiba, Samsung are adopting 14 nm process, and will be put into FinFET production as soon as the research and development work is completed. FinFET technology, invented by researchers at the University of California, Berkeley, offers significant performance improvements, including the ability to tightly control short-channel effects at submicron levels and reduce short-state currents. And the technology can be a single transistor as a multi-gate device. Use experimental gate stack material