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利用脉冲碳等离子体源可以直接在Si和Ge片镀制类金刚石薄膜.被镀制的类金刚石薄膜一般采用激光拉曼光谱仪进行定性分析.实验结果表明:SP~3成分含量与SP~2成分含量之比,与放电回路的电压有关,在一定电压范围内,随电压的增加,SP~3与SP~2之比增大,从而选择出镀制类金刚石薄膜的最佳工艺参数.
The pulsed carbon plasma source can directly coat diamond-like carbon films with Si and Ge films.The diamond-like carbon films are generally characterized by laser Raman spectroscopy.The experimental results show that the content of SP ~ 3 and SP ~ 2 The ratio of SP 3 to SP 2 increases with the increase of voltage within a certain voltage range, so the optimal process parameters of diamond-like carbon film are selected.