亚微米尺寸金属电极的制备工艺

来源 :太赫兹科学与电子信息学报 | 被引量 : 0次 | 上传用户:lixuantea
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亚微米尺寸金属电极在高电子迁移率晶体管(HEMT)等半导体电子学器件中有重要应用,其制作是器件制作中的关键工艺,对器件性能有着重要影响。本文选择合适的涂胶旋转转速、烘烤温度(180℃)和时间,可以有效地减少电子束曝光后所产生的气泡。通过对聚甲基丙烯酸甲酯/聚二甲基戊二酰亚胺(PMMA/PMGI)双层胶进行电子束曝光和显影,确定了合适的曝光剂量为550μC/cm2。通过调整显影液配比,并将显影时间控制在合理范围,获得了光滑完整的PMMA/PMGI双层光刻胶曝光图形。开发了双层光刻胶电子束曝光工艺,制备出宽度为200 nm的金属电极。 Submicron-sized metal electrodes have important applications in semiconductor electronics such as high electron mobility transistors (HEMTs). Their fabrication is a key process in device fabrication and has a significant impact on device performance. In this paper, the choice of the appropriate rotation speed of glue, baking temperature (180 ℃) and time, can effectively reduce the bubbles generated after electron beam exposure. The electron beam exposure and development of the polymethylmethacrylate / polydimethylglutarimide (PMMA / PMGI) bilayer gel was performed to determine a suitable exposure dose of 550 μC / cm2. By adjusting the developer ratio and controlling the developing time within a reasonable range, a smooth and complete double-layer photoresist exposure pattern of PMMA / PMGI was obtained. A double-layer photoresist electron beam lithography process was developed to fabricate a metal electrode with a width of 200 nm.
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