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在新结构薄膜电致发光器件中,电极处的势垒的高度决定电子的注入数量.在电极界面处插入不同的薄膜材料,可以改变势垒的高度,并对电子注入数量和器件的发光亮度产生影响.通过拟合计算得到ZnO/SiO,ITO/SiO的界面势垒高度分别为0.51和1.87eV.
In the new structure thin film electroluminescent device, the height of the potential barrier at the electrode determines the number of electrons injected, and inserting different thin film materials at the electrode interface can change the height of the potential barrier and change the number of electron injection and the luminance of the device The results show that the interface barrier height of ITO / SiO is 0.51 and 1.87eV, respectively.