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中国科学院上海微系统与信息技术研究所的研究人员在硅纳米线阵列宽光谱发光方面取得新进展。研究人员将SOI(绝缘衬底上的硅)与表面等离子体技术相结合,研究了硅纳米线阵列的发光性能,并与复旦大学合作借助时域有限差分法(FDTD)理论计算了硅纳米线发光峰位与纳米腔共振模式的对应关系,为实现硅基光电集成奠定了实验与理论基础,有助于推动硅基光源的大规模应用。
Researchers at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, made new progress in broad-spectrum luminescence of silicon nanowire arrays. The researchers combined SOI (silicon on an insulating substrate) with surface plasmonics to study the luminescent properties of silicon nanowire arrays and collaborated with Fudan University to calculate the silicon nanowires by means of the FDTD (Time-Domain Finite Difference) The corresponding relationship between the luminescence peak position and the resonance mode of the nanocavity lays the experimental and theoretical foundation for the silicon-based photoelectric integration, which is helpful to promote the large-scale application of the silicon-based light source.