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采用 VHF- PECVD方法 ,以高氢稀释的硅烷为反应气体 ,低温条件下成功地制备了系列 μc- Si∶ H薄膜 .对薄膜的厚度测量表明 :增大激发频率和反应气压能有效提高沉积速率 ;随着等离子体功率密度的增大 ,沉积速率呈现出先增后减的变化 .薄膜的 Ram an光谱、XRD及 TEM等测试结果表明 :提高衬底温度或减小硅烷浓度 ,可增大薄膜的结晶度和平均晶粒尺寸 ;等离子体激发频率的增大只影响薄膜的结晶度 ,并使结晶度出现极大值 ;薄膜中存在(111)、(2 2 0 )和 (311)三个择优结晶取向 ,且各结晶取向的平均晶粒尺寸不同 .
Using the VHF-PECVD method, a series of μc-Si: H thin films were successfully prepared using silane diluted with high hydrogen as reactant gas.The film thickness measurements show that increasing the excitation frequency and reaction pressure can effectively increase the deposition rate With the increase of plasma power density, the deposition rate changes firstly and then decreases.The results of Ram an spectroscopy, XRD and TEM showed that increasing the substrate temperature or decreasing the silane concentration can increase the Crystallinity and average grain size. The increase of the plasma excitation frequency only affects the crystallinity of the films, and the crystallinity reaches the maximum value. There are three preferential (111), (220) and (311) Crystal orientation, and the average crystal grain size of each crystal orientation is different.