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采用直流磁控溅射法在高阻硅上室温生长TiN超导薄膜.制备了不同溅射功率、溅射气压以及N2/Ar比份条件下的样品.综合物性测量系统(PPMS)测出了样品的超导临界温度Tc在3.2~4.0K之间,给出了Tc与制备条件的关系.X射线衍射(XRD)分析测量了样品的(111)TiN衍射峰半高宽(FWHM)、晶格常数.原子力显微镜(AFM)测量得到表面粗糙度(RES)最好为1.716nm,且给出较高溅射功率有利于降低表面粗糙度.
TiN superconducting thin films were grown on silicon with high resistivity silicon by DC magnetron sputtering at room temperature.The samples with different sputtering powers, sputtering pressures and N2 / Ar ratios were prepared.The total physical property measurement system (PPMS) The critical temperature of superconductivity Tc of the sample is between 3.2 and 4.0K, and the relationship between Tc and preparation conditions is given.The X-ray diffraction (XRD) measurement of FWHM, FWHM The lattice constant (AF) is preferably 1.716 nm measured by AFM, and higher sputtering power is beneficial to reduce the surface roughness.