利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3／BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒。用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析。结果表明:GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm～400 nm左右,长度可达几十微米。室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰。 Ga 2 O 3 / BN thin films were prepared on Si (111) substrate by RF magnetron sputtering and a large number of one-dimensional GaN nanorods were synthesized by annealing in ammonia. The crystal structure of the sample was characterized by XRD, SAED, FTIR, SEM, TEM and PL. Composition, morphology and optical properties were analyzed. The results show that the GaN nanorods are hexagonal wurtzite single crystal with the diameter about 150 nm ~ 400 nm and the length up to tens of micrometers. The photoluminescence spectra at room temperature showed a strong strong UV emission peak at 372 nm and a blue emission peak at 420 nm.