研究了氧化铟镁(MgInO)薄膜晶体管在不同波长下的光响应。实验表明,入射光波长减小,光电流将增加。和积累区相比,耗尽区具有更高的信噪比,更适合于紫外探测。器件在短波时具有较大的响应度(>1A/W),截止波长在360nm左右。同时研究了源漏电压和沟道长度对光电流的影响。光电流与源漏电压之间具有良好的线性关系;沟长变短,渡越时间减小,可获得更高的光电增益。 The photoresponse of MgInO thin film transistors at different wavelengths was studied. Experiments show that the incident light wavelength decreases, photocurrent will increase. Compared with the accumulation zone, the depletion zone has a higher signal-to-noise ratio and is more suitable for UV detection. Device in the short-wave has a greater responsiveness (> 1A / W), cut-off wavelength of about 360nm. At the same time, the influence of source and drain voltage and channel length on photocurrent was studied. There is a good linear relationship between the photocurrent and the source-drain voltage; the groove length becomes shorter, the transit time decreases, and a higher photoelectric gain can be obtained.