【摘 要】
：
描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果.这种探测器的灵敏面积为50mm×20mm.P掺杂面被等分成相互平行的,长度为20mm,宽度为3mm的16条,相邻条
【机 构】
：
中国科学院近代物理研究所,中国科学院近代物理研究所,中国科学院近代物理研究所,中国科学院近代物理研究所,中国科学院近代物理研究所,中国科学院近代物理研究所,中国科学院近代物理研究所,中国科学院近代物理
论文部分内容阅读
描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果.这种探测器的灵敏面积为50mm×20mm.P掺杂面被等分成相互平行的,长度为20mm,宽度为3mm的16条,相邻条之间的间距为140μm.当探测器工作在全耗尽偏压下,每一条的反向漏电流的典型值<2nA.对239Puα粒子的能量分辨为0.5%—09%,相邻条之间的相互影响(crosstalk)为4%—8%.用于72MeV/u的C束离子测量,得到能量分辨为027%.
Described the use of microelectronics technology successfully developed a number of silicon detector technology and the preparation of the test results.Sensor sensitive area of 50mm × 20mm.P doped surface is equally divided into parallel to each other, the length of 20mm, width 16 of 3 mm with a pitch of 140 μm between adjacent strips Typical reverse leakage current of <2 nA for each detector when operated at fully depleted bias, with energy resolution of 0.5% for 239Puα particles, -09%, crosstalk between adjacent bars is 4% -8%. For C-beam ion measurements at 72 MeV / u, an energy resolution of 027% is obtained.
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