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报道了掺 As_2O_3 和掺 Ca_2O_3+Cr 水平法生长的 CaAs 单晶中氧有关缺陷的红外吸收谱,揭示了氧缺陷吸收蜂的出现和样品电阻率的依赖关系,并对氧缺陷中心(O_i-V_(As))的负 U 特性进行了讨论。淬火实验表明,氧还可能以其它形态存在于 GaAs 晶体中。
The infrared absorption spectra of oxygen-related defects in as-grown CaAs single crystal doped with As_2O_3 and Ca_2O_3 + Cr were reported. The dependence of the oxygen vacancy absorption on the sample resistivity was revealed. The oxygen defect center (O_i-V_ (As)) is discussed. Quenching experiments show that oxygen may also exist in other forms of GaAs crystals.