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(一)引言 近年来InP在光电和微波器件中的应用已引起广泛重视。对InP的欧姆接触和肖特基势垒已有报道,这些结果表明,φ_(Bp)较φ_(Bn)大,n-InP的比接触电阻较p-lnP的低。以InP为衬底的多层结构器件中,表面层有时是p-InP,因此研究p-InP与接触金属界面上的冶金行为和电学特性,对改善器件参数和提高器件的可靠性有实际意义。对p-InP与接触金属Pd,Mg/Ag,Au-Zn,Mg/Au,Pd/Ag的界面特性,已有用俄歇电子能谱(AES)和电子探针(EP)进行的研究结果。
(A) Introduction InP recent years in optoelectronic and microwave devices has attracted widespread attention. The ohmic contact and Schottky barrier to InP have been reported. These results indicate that φ_ (Bp) is larger than φ_ (Bn) and the specific contact resistance of n-InP is lower than that of p-lnP. InP-based multilayer devices, the surface layer is sometimes p-InP, so studying the metallurgical behavior and electrical properties at the interface between p-InP and the contact metal is of practical significance for improving the device parameters and improving the reliability of the device . The interfacial properties of p-InP and Pd, Mg / Ag, Au-Zn, Mg / Au and Pd / Ag have been studied by Auger electron spectroscopy (AES) and electron probe (EP).