论文部分内容阅读
对 Si(111)和 Si(10 0 )衬底上用化学气相沉积法制成的 Ti O2 薄膜进行了不同温度的热处理 ,并用原子力显微镜对处理后薄膜的形貌变化进行了观察。 X-射线衍射分析表明形貌变化过程即晶化过程。晶化物相为金红石。晶化程度 (或形貌变化程度 )与热处理的温度及次数 (或热处理时间 )有关。Si(111)衬底上 Ti O2 晶化形貌为杂乱分布的柱状、板状 ,定向不好 ;而 Si(10 0 )衬底上 Ti O2 晶化形貌为定向较好的四方柱状或板状 ,这是因为 Si(10 0 )与金红石 (0 0 1)都属四方对称结构 ,两相结构在此方向上容易匹配的结果。在相同热处理条件下 ,Si(111)衬底比 Si(10 0 )衬底上 Ti O2 晶化程度高 ,说明非定向附生的晶化作用比定向附生的晶化作用容易实现。
Ti O2 films prepared by chemical vapor deposition on Si (111) and Si (100) substrates were heat-treated at different temperatures. The morphologies of the treated films were observed by atomic force microscopy. X-ray diffraction analysis showed that the process of morphological changes, that is, the crystallization process. Crystalline phase is rutile. The degree of crystallization (or degree of morphological changes) is related to the temperature and the number of heat treatments (or heat treatment time). The morphology of Ti02 on Si (111) substrate is disorderly distributed in column, plate and orientation, while the orientation of Ti O2 on Si (111) substrate is well-oriented square columnar or plate This is because both Si (100) and rutile (0 0 1) are tetragonal symmetrical structures, the result of which the two-phase structure is easily matched in this direction. Under the same heat treatment conditions, the crystallization of Ti (superscript 2 +) on the Si (111) substrate is higher than that on the Si (100) substrate, indicating that the crystallization of non-oriented epigenates is easier than the crystallization of directed epiphytes.