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智能电网用压接式绝缘栅双极型晶体管(IGBT)模块主要通过压力接触来实现热耗散,而这种封装散热方式存在界面接触不佳、散热性能差等缺点,导致同等通流能力下芯片的结温偏高,电性能下降,甚至影响其长期可靠性。为了克服这些问题,提出了采用纳米银焊膏作为芯片连接材料替代压力接触与芯片形成电触点的方式,研发了一款针对智能电网的采用纳米银焊膏的烧结式IGBT模块;并表征了烧结式IGBT模块的整体热阻、静态电性能及芯片剪切强度,完成了与商用同等级压接式IGBT模块的性能比对。实验结果显示:烧结式IGBT模块的热阻比压接式IGBT模块下降了15.8%;2种模块的静态电性能的测试结果基本一致,进一步验证了烧结式IGBT模块的封装可行性;对于大面积IGBT芯片(尺寸为13.5 mm×13.5 mm),其连接芯片烧结银接头的剪切强度约为20 MPa,接头质量较高。以上结果说明采用纳米银焊膏封装高压IGBT模块,不仅可以显著降低压接IGBT模块的热阻,同时仍能获得良好的静态电性能。因此,由于其在高压大电流电能运输过程中较高的转换效率及功率密度,烧结式IGBT模块有望应用于智能电网。
Smart Grid with Crimp Insulated Gate Bipolar Transistor (IGBT) module is mainly through the pressure contact to achieve heat dissipation, and this package there are thermal interface poor contact, poor heat dissipation and other shortcomings, leading to the same flow capacity High junction temperature chip, electrical performance decline, and even affect its long-term reliability. In order to overcome these problems, a nano-silver solder paste is proposed as a chip connection material instead of a pressure contact to form an electrical contact with a chip. A sintered IGBT module using nanometer silver paste for smart grid was developed. The overall thermal resistance, static electrical performance and die shear strength of the sintered IGBT module are compared with those of the commercially available crimp-type IGBT module of the same grade. The experimental results show that the thermal resistance of the sintered IGBT module is 15.8% lower than that of the pressed IGBT module. The static electricity performance of the two modules are basically the same, which further verifies the feasibility of the package of the sintered IGBT module. For the large area The IGBT chip (13.5 mm × 13.5 mm in size) has a shear strength of about 20 MPa for the silver-bonded silver chip, and a high quality connector. The above results show that the use of nano silver paste encapsulation of high-voltage IGBT module, not only can significantly reduce the thermal resistance of the crimping IGBT module, while still able to obtain good static electrical properties. Therefore, due to its high conversion efficiency and power density during high-voltage and high-current power transport, the sintered IGBT module is expected to be applied to the smart grid.