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氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a plane的蓝宝石衬底生长了高质量的氧化锌外延材料。在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌。通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料。用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20O薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20O材料的吸收边的蓝移现象等。以上说明了我们用分子束外延生长 收稿日期:2003 07 22·09· 第1期StructuralandOpticalCharacterizationofZnOandZnMgOFilmsona-planesapphiresbyMolecularBeamEpitaxy2004年设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料。
Zinc oxide material is a new generation of wide bandgap optoelectronic semiconductor materials. We have grown high-quality zinc oxide epitaxial materials on a plane sapphire substrate by plasma molecular beam epitaxy. During the growth process, the surface morphology of the material films was investigated in situ using a reflected high energy electron beam diffraction (RHEED). By adjusting the composition of Mg in ZnMgO material, a wide band gap material with adjustable bandgap is grown. The transmission and absorption spectra of ZnO, Zn0.89Mg0.11O and Zn0.80Mg0.20O thin films were studied by UV-visible transmission spectroscopy. The blue shift of absorption edge of Zn0.89Mg0.11O, Zn0.80Mg0.20O was observed Phenomenon and so on. The above shows that we use molecular beam epitaxy growth Structures and Optical Properties of ZnO and ZnO nanostructures by Molecular Beam Epitaxy in 2004 to achieve the success of the growth of high-quality coated silica and ZnMgO thin film material changes.