为了获得4H-SiC横向BJT器件高耐压下的高电流增益,文中通过降低漂移区的掺杂浓度(NDRI),使得漂移区内靠近基极方向的电场强度降低,从而使集-基结在基区的耗尽大幅减小。通过对基区的优化,就可以在高耐压下获得高电流增益。仿真结果表明,当漂移区内的掺杂浓度(NDRI)为3.3 1016cm-3时,4H-SiC横向BJT器件可以在保持较高耐压(3 000 V以上)的同时,集-基结在基区的耗尽最少。当基区掺杂浓度(PB)为3 1017cm-3、厚度(WB)为0.25 mm时,获得耐压高于3 000 V、电流增益近400的4H-SiC横向BJT器件。 In order to obtain high current gain under high breakdown voltage of 4H-SiC lateral BJT devices, by reducing the doping concentration (NDRI) in the drift region, the intensity of the electric field near the base in the drift region is reduced, Base depletion drastically reduced. Through the optimization of the base area, high current gain can be obtained under high withstand voltage. The simulation results show that when the NDRI is 3.3 1016cm-3, the 4H-SiC lateral BJT device can maintain high breakdown voltage (above 3000V) The area is depleted at least. When the basal doping concentration (PB) is 3 1017 cm-3 and the thickness (WB) is 0.25 mm, a 4H-SiC lateral BJT device with a withstand voltage higher than 3 000 V and a current gain of nearly 400 is obtained.