该产品能在193nm下曝光,微光学制作用灰色度掩模。由美国NIPT公司开发的。用电子束直接刻蚀,利用与HEBS不同的玻璃材料,即使多次UV曝光也不会出现发黑现象,而且可缩短用电子束蚀刻时间,因此不仅可用i线步进器和DUV刻蚀相对应,而且大大的缩短灰色标度掩模控制的时间。在光互连,光纤器件领域等提供给用户 The product can be exposed at 193nm, micro-optical production with a gray mask. Developed by the United States NIPT company. With electron beam direct etching, using a glass material different from that of HEBS, blackening does not occur even after multiple UV exposures, and electron beam etching time can be shortened, so that not only the i-line stepper and the DUV etching phase Corresponding, but also greatly reduce the gray scale mask control time. In the optical interconnection, optical fiber devices to provide users in the field