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在多浮空场环理论的基础上,采用深阱多浮空场环技术,在200μm的终端长度上实现了一种击穿电压为931V的VDMOS终端保护环结构。此终端硅表面各环电场均匀,最大表面电场强度为2.42e5V/cm,在相同条件下,该终端结构的耐压比普通多浮空场环终端结构提升了34.15%,有效提高了终端效率。
Based on the theory of multi-floating field ring, a VDMOS terminal protection ring structure with a breakdown voltage of 931V is realized on the terminal length of 200μm by using the deep well multi-floating field ring technique. The electric field of each ring on the silicon surface is uniform and the maximum surface electric field strength is 2.42e5V / cm. Under the same conditions, the terminal structure has a higher breakdown voltage than the conventional multi-floating field ring termination structure by 34.15%, effectively improving the terminal efficiency.