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基于Sentaurus Workbench(SWB)TCAD可制造性设计平台进行AlGaN/GaN器件的结构设计和仿真,并对影响二维电子气的重要参数因素进行了研究及优化,诸如AlGaN势垒层中Al组分x、AlGaN势垒层厚度h、应变弛豫度r和栅偏压Vg等因素。参数相关性的制约结果,无疑会反映在对器件物理特性的制约及影响上。研究结果表明,在一定条件下增大势垒层中Al组分和势垒层厚度可以提高器件的电流传输特性。然而随着二者的不断增大将会引起应变弛豫的发生,而应变弛豫的发生会降低器件的性能。
The structure design and simulation of AlGaN / GaN devices are based on Sentaurus Workbench (SWB) TCAD manufacturability design platform, and the important parameters influencing two-dimensional electron gas are studied and optimized, such as Al component x AlGaN , AlGaN barrier thickness h, strain relaxation r and gate bias Vg and other factors. Restrictions on the correlation of parameters will undoubtedly be reflected in the constraints and effects on the physical properties of the device. The results show that under certain conditions, increasing the Al layer and the barrier layer thickness in the barrier layer can improve the current transfer characteristics of the device. However, as both of them increase, strain relaxation will occur, and strain relaxation will reduce the performance of the device.