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设计并实现了一种适用于X波段(11~12 GHz)的高性能低噪声放大器(LNA),该低噪声放大器选用Ga As FET(MGF4941AL)低噪声半导体管,采用三级级联的方式设计,三级通过采用不同静态工作点之间的配合,达到降低放大器噪声提高增益的目的。利用微波电路仿真软件ADS仿真优化后加工实物并测试。测试结果表明,低噪声放大器在11~12 GHz工作频带内的噪声系数小于2dB,输入/输出驻波比(VSWR)小于2,功率增益大于30 d B,增益平坦度小于1.5 d B,适用于X波段接收机前端。
A high performance low noise amplifier (LNA) for X-band (11 ~ 12 GHz) is designed and implemented. This low noise amplifier is designed with Ga As FET (MGF4941AL) low noise semiconductor. , Three through the use of different static operating point between the cooperation, to reduce the amplifier noise to increase the gain. Using microwave circuit simulation software ADS simulation to optimize the physical processing and testing. The test results show that the noise figure of the LNA is less than 2dB, the input / output VSWR is less than 2, the power gain is greater than 30 d B, and the gain flatness is less than 1.5 d B in the operating frequency range of 11-12 GHz. X-band receiver front end.