测试功率晶体管安全工作区的最普通的方法之一,是拿一只有代表意义的晶体管样品在可以控制的击穿条件下测试,测试装置保护晶体管免受损坏,测出安全工作区的几个点,绘出整个曲线。遗憾的是,这种方法有几个缺点:很慢;为了确定每一个点需要进行几次测量;且在每次测量之前管子都必须加以冷却。再则,由于管子热阻抗的分布不匀,结温T_J不能控 One of the most common ways of testing a power transistor’s safe work area is to take a representative transistor sample under controlled breakdown conditions, test the device to protect the transistor from damage, measure several points in a safe work area , Draw the entire curve. Unfortunately, this method has several drawbacks: very slow; several measurements are needed to determine each point; and the tube must be cooled before each measurement. Furthermore, the junction temperature T_J can not be controlled due to uneven distribution of thermal resistance of the pipe