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利用超高真空化学气相淀积（ＵＨＶ／ＣＶＤ）系统在 ６５０℃生长出表面光亮的 ＧｅＳｉ单晶 在１２００Ｌ／ｍｉｎ分子泵与前级机械系间串接 ４５０Ｌ／ｍｉｎ分子泵，改善了生长环境串接分子泵后生长的 样品的Ｘ射线双晶衍射分析表明，外延层衍射峰半宽仅为 １９８ａｒｃｓｅｃ， 且出现了 Ｐｅｎｄｅｌｌｏｓｕｎｇ干涉条 纹，说明外延层结晶质量很好。
The GeSi single crystal with bright surface was grown at 650 ℃ by ultra-high vacuum chemical vapor deposition (UHV / CVD) system. The 450L / min molecular pump was connected in series between the 1200L / min molecular pump and the former mechanical system to improve the growth environment string X-ray double crystal diffraction analysis of the sample grown after the molecular pump showed that the half width of the diffraction peak of the epitaxial layer was only 198arcsec, and the Pendellosung interference fringes appeared, indicating that the crystal quality of the epitaxial layer is good.