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采用脉冲阳极 /阴极电流和化学氧化两步法分别在 1∶1的氢氟酸和乙醇溶液中及 2 0 %硝酸溶液中制备出孔径约为 0 .5～ 3μm ,厚度大约为 10～ 2 0 μm的多孔硅样品 ,将获得的多孔硅结构再进一步用扫描电子显微镜和拉曼光谱仪进行表面形貌和光学性质的考察 .与恒电流 -化学氧化两步法制得的多孔硅相比 ,用脉冲电流法得到的多孔硅的孔径范围较大 ,且多孔层较厚 .制备时加紫外光照显著提高了多孔硅的厚度 ,并发生“蓝移”现象 .用脉冲电流法制得的多孔硅在老化后 (在干燥器放置一年 )同样观察到光致发光明显增强 .
The pulse anode / cathode current and chemical oxidation two-step method were prepared in a 1: 1 hydrofluoric acid and ethanol solution and 20% nitric acid solution was prepared with a pore diameter of about 0.5 ~ 3μm, a thickness of about 10 ~ 20 μm porous silicon samples, the porous silicon structure obtained was further examined by scanning electron microscopy and Raman spectroscopy for surface topography and optical properties.Compared with the porous silicon prepared by the galvanostatic-chemical oxidation two-step method, Porous silicon obtained by the current method has a larger pore size and a thicker porous layer, and the addition of ultraviolet light significantly increases the thickness of the porous silicon and “blue shift” occurs during the preparation process. The porous silicon prepared by the pulse current method is aged after aging (Placed in a desiccator for one year) was also observed to significantly increase photoluminescence.