RF方面,SiGe BiCMOS工艺有何进展,能否真正取代GaAs工艺。目前,SiGe BiCMOS的工艺技术己经开发完成,正在客户试用阶段,2012年进入量产。从应用状况来看,SiGe BiCMOS和GaAs大部分在不同的市场应用范畴,但是随着各自技术的开发和延伸,其应用领域开始出现一定的重叠,在其重叠的 RF, SiGe BiCMOS process of progress, can really replace the GaAs process. Currently, SiGe BiCMOS process technology has been developed, is in the customer trial phase, mass production in 2012. From the application point of view, SiGe BiCMOS and GaAs most of the different market applications, but with the development and extension of their respective technologies, the application of certain areas began to overlap, in its overlap