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本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi2Te3热电薄膜和p型Sb2Te3热电薄膜.在退火时间同为1h的条件下,对所制备的Bi2Te3薄膜和Sb2Te3薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150℃时,制备的n型Bi2Te3热电薄膜的Seebeck系数最大,为-148μVK-1,功率因子也达到最大,为0.893×10-3Wm-1K-2;在退火温度为200℃时,制备的p型的Sb2Te3热电薄膜的Seebeck系数为+117μVK-1,功率因子达到最大,为0.797×10-3Wm-1K-2.因此,本文分别选取了150℃退火温度下制备的Bi2Te3薄膜和退火温度为200℃下制备的Sb2Te3薄膜作为薄膜温差单体电池的p型和n型薄膜层.结果表明,在冷热端温差为50K的条件下,薄膜温差单体电池的输出电压为15.26mV,最大的输出功率为0.129μW.
In this paper, ion-beam sputtering Bi / Te and Sb / Te binary composite target, direct preparation of n-type Bi2Te3 thermoelectric thin film and p-type Sb2Te3 thermoelectric thin film annealing time at the same conditions 1h, the prepared Bi2Te3 thin film and Sb2Te3 The results show that the Seebeck coefficient of the n-type Bi2Te3 thermoelectric thin films is -148μVK-1 and the power factor reaches the maximum at the annealing temperature of 150 ℃. , Which is 0.893 × 10-3Wm-1K-2. When the annealing temperature is 200 ℃, the Seebeck coefficient of the p-type Sb2Te3 thermoelectric thin film is + 117μVK-1, and the power factor reaches the maximum value of 0.797 × 10-3Wm-1K -2. Therefore, the Bi2Te3 thin films prepared at the annealing temperature of 150 ℃ and the Sb2Te3 thin films prepared at the annealing temperature of 200 ℃ were selected as the p-type and n-type thin film layers of the thin film temperature difference single cells respectively in this paper.The results show that in the hot and cold Under the condition that the temperature difference is 50K, the output voltage of the thin-film temperature difference cell is 15.26mV and the maximum output power is 0.129μW.