湿法化学腐蚀已被广泛地应用于敏感器件传感结构的微细加工中.近年来,在VLSI中等离子体干法腐蚀已成为获得细线条图形的可行技术.然而,干法腐蚀工艺无论是等离子体腐蚀或反应离子腐蚀,相对于湿法腐蚀来说都是比较慢的.在需要深腐蚀的应用中(如电子束光刻的对准符号刻蚀,电路隔离槽或敏感器件的微细结构腐蚀)当前都着力提高腐蚀速率.在传感器的开发中,主要问题之一是封装,为简化到处于测量环境的传感器的外部连接,希望通过传感器背面进行连接.在化学传感器中,背面连接最为有利.因为假如所有的引线都 Wet chemical etching has been widely used in the microfabrication of sensing devices in sensitive devices. In recent years, dry etching of plasma in VLSI has become a feasible technique for obtaining fine line patterns. However, the dry etching process, whether plasma Bulk or reactive ion etching is slow relative to wet etching, and in applications that require deep etching (such as alignment symbol etching of electron beam lithography, etching of circuit isolation trenches or fine structures of sensitive devices One of the major issues in the development of sensors is encapsulation, where it is desirable to connect through the back of the sensor in order to simplify the external connection to the sensor in the measuring environment, where the backside connection is most advantageous. Because if all the leads are