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制备在以SiO2 为绝缘埋层的SOI材料上的电子器件存在着自加热问题 .为减少自加热效应和满足一些特殊器件 电路的要求 ,利用多孔硅外延转移技术制备出以二氧化硅和氮化硅为多绝缘埋层的SOI新结构 .高分辨率透射电镜和扩展电阻测试结果表明得到的SOIM新结构具有很好的结构和电学性能 ,退火后的氮化硅埋层为非晶结构 .
There are self-heating problems in electronic devices fabricated on SOI materials buried in SiO2 as insulating layer.In order to reduce self-heating effect and meet the requirements of some special device circuits, porous silicon epitaxial transfer technology is used to prepare silicon dioxide and nitride Silicon is a SOI new structure with multi-insulation buried layer.The results of high-resolution transmission electron microscopy and extended resistance test show that the new SOIM structure has good structure and electrical properties, and the annealed silicon nitride buried layer is amorphous.