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利用四波混频(FWM)技术测试了非掺杂、掺Fe半绝缘InP单晶的光电特性,对载流子的产生、复合和输运等过程进行了研究,分析了深陷阱在载流子的产生与输运中的作用,并给予了解释。利用光栅衰减动力学得到在不同激发水平下非平衡自由载流子的扩散系数和复合时间。通过分析衍射效率和激发能量之间的相互关系,测定了缺陷的电学特性,即它们在光照下的传输和对载流子传输的贡献。这种技术可以通过测量时间和空间上的载流子分布,进而利用光学技术测试半导体材料的光电特性。
The photoelectric properties of undoped, Fe-doped semi-insulating InP single crystal were tested by four-wave mixing (FWM) technique. The generation, recombination and transport of carriers were studied. The role of child generation and transport, and gave an explanation. The diffusion coefficient and recombination time of unbalanced free charge carriers at different excitation levels were obtained by using grating attenuation dynamics. By analyzing the correlation between the diffraction efficiency and the excitation energy, the electrical properties of the defects, ie, their transport under illumination and their contribution to carrier transport, were determined. This technique can be used to measure optical and electrical properties of semiconductor materials by measuring the distribution of time and space carriers and using optical techniques.