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采用等离子体增强化学气相沉积技术和电子束蒸发技术制备了一种新型的线性缓变异质结变容二极管———Au/Cr合金(电极)/multi-layer(p)nc-Si∶H/(n)c-Si/(电极)Au/Ge合金结构.I V,C V,C f以及DLTS的测试结果表明:其电容变化系数远大于单晶硅线性缓变异质结的电容变化系数,正向导电机制符合隧穿辅助辐射复合模型,这是nc-Si∶H层中nc-Si晶粒的量子效应所致;反向电流主要由异质结中空间电荷区的产生电流决定,且反向漏电流小,反向击穿电压高,表现出较好的整流特性.
A novel linear graded heterojunction varactor diode, Au / Cr alloy electrode / multi-layer (p) nc-Si: H / (n) c-Si / (electrode) Au / Ge alloy structure.The results of IV, CV, C f and DLTS show that the capacitance variation coefficient is much larger than the capacitance variation coefficient of single- The electrical mechanism is in accordance with the tunneling assisting radiation recombination model, which is due to the quantum effect of the nc-Si grains in the nc-Si: H layer; the reverse current is mainly determined by the generation current of the space charge region in the heterojunction, Leakage current is small, high reverse breakdown voltage, showing better rectification characteristics.