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利用Ni/Ge/Au/Ni/Au和Pd/In两种金属结构成功地对体硅掺杂N-GaAs半导体(Nd=10~(18)cm~(-3))和离子注入N-GaAs半导体(dose=8×10~(12)cm~2,注入有源区深度(d=0.2μm)制成低阻欧姆接触。并对实验结果和接触机理进行了讨论。所得合金接触的接触电阻率分别为10~(-6)Ωcm~2(10~(18)cm~(-3)掺杂),和10~(-3)Ωcm~(-2)(8×10~(12)cm~2注入)数量级并具有长期的稳定性。接触制备方法和GaAs工艺相适。
The bulk silicon doped N-GaAs semiconductors (Nd = 10 ~ (18) cm ~ (-3)) and ion implantation of N-GaAs were successfully fabricated by Ni / Ge / Au / Ni / Au and Pd / (= 8 × 10 ~ (12) cm ~ 2) and the depth of the active region (d = 0.2μm) was made into a low resistance ohmic contact.And the experimental results and the contact mechanism were discussed.The contact resistance (10 ~ (-6) Ωcm ~ 2 (10 ~ (18) cm ~ (-3)) and 10 ~ (-3) Ωcm ~ (2) ~ 2 injection) of order of magnitude and long term stability. The contact preparation method is compatible with the GaAs process.