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MOSFET ESD潜在损伤的有效检测一直是一个难以解决的问题 .实验对比发现 ,MOSFET沟道电流的 1/ f噪声比传统的电参数更能敏感地反映栅氧化层中 ESD潜在损伤的情况 .在相同的静电应力条件下 ,1/ f噪声的变化要比常规电参数敏感的多 ,其功率谱幅度的相对变化量比跨导的最大相对退化量大 6倍以上 ,因此可以作为MOSFET ESD潜在损伤的一种敏感的检测方法 .在给出实验结果的同时 ,对这一敏感性的机理进行了较深入的分析
The effective detection of potential damage of MOSFET ESD has always been a difficult problem to be solved.Experimental comparison shows that the 1 / f noise of the MOSFET channel current reflects the potential damage of ESD in the gate oxide more sensitively than the traditional electrical parameters.In the same , The change of 1 / f noise is more sensitive than that of conventional electrical parameters. The relative variation of power spectrum amplitude is more than 6 times larger than the maximum relative degeneration of transconductance, so it can be used as potential damage of MOSFET ESD A Sensitive Testing Method The mechanism of this sensitivity is analyzed in depth while giving experimental results