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在纳米CMOS集成电路中,静电放电(ESD,electrostatic discharge)防护能力随着组件的尺寸缩减而大幅地降低,传统的ESD防护电路设计及方法已不堪使用,所以在纳米制程中ESD防护组件的防护电路设计必需更加以改良。本文针对一个具有初始导通特性的片上(纯净)(already-on(native))NMOS(N-Metal-Oxide-Semiconductor,N沟道金属氧化物半导体)组件,研究其ESD组件特性,提出了其在纳米CMOS集成电路上的创新应用,提出already-on(native)组件的全芯片ESD防护电路架构,设计了全新的ESD防护电路。
In nano-CMOS integrated circuits, the electrostatic discharge (ESD) protection capability is greatly reduced as the size of the package shrinks. The traditional ESD protection circuit design and methods have become unaffordable. Therefore, the protection of ESD protection components in the nano-fabrication process Circuit design must be more improved. In this paper, we investigate the characteristics of an ESD device based on an already on-NMOS (N-Metal-Oxide-Semiconductor) device with initial on- In the innovative application of nano-CMOS integrated circuits, a full-chip ESD protection circuit architecture of already-on (native) components is proposed and a new ESD protection circuit is designed.