近日,我国自主研制的又一款4英寸高纯半绝缘碳化硅衬底产品面世。据报道,该碳化硅项目由是山东天岳研制而成的。中国电子材料行业协会组织的专家认为,该成果国内领先,已达到国际先进水平。此前,北京天科合达与中科院合作,成功研制了从2英寸到6英寸的碳化硅衬底,完成了我国碳化硅半导体从无到有的过程。如今,我国第二家企业也实现了碳化硅材料大规模量产,标志着我国碳化硅材料发展逐渐走向成熟。 Recently, China has independently developed a 4-inch high-purity semi-insulating silicon carbide substrate products available. It is reported that the silicon carbide project developed by Shandong Tianyue made. China Electronics Materials Industry Association experts believe that the results of the leading domestic and has reached the international advanced level. Prior to this, Beijing Tianke He Da cooperation with the Chinese Academy of Sciences, successfully developed from 2 inches to 6 inches of silicon carbide substrate, completed our SiC semiconductor from scratch process. Nowadays, the second enterprise in our country has also realized the mass production of silicon carbide materials, which indicates that the development of silicon carbide materials in our country is gradually becoming mature.